Synthesis and Characterization of Stoichiometric Cobalt Monosulfide (CoS) Film by a Simple and Cost-Effective Screen-Printing Process

The electrical, morphological, and electro-optical behaviour of nanocrystalline cobalt monosulfide (CoS) film prepared on a clean glass substrate by screen-printing route and sintered at 250°C was studied. The nanocrystalline (with hexagonal) structure of the film was indexed by X-ray diffraction technique. The surface morphology of the film is very dense with no visible pinholes and cracks. EDX technique validates the growth of the nearly stoichiometric film. UV-VIS-DRS spectroscopy displays that the band gap (direct transition) energy (Eg) of 250°C sintered film was 1.45 eV. Photo-sensing behaviour of nanocrystalline CoS film was studied using current–voltage (I–V plot) characterization. I–V characteristics showed the change in the performance as when light is flashed on the device. p-Type conductivity for the film was observed via the hot probe technique. The accomplished results of CoS film were very awakening for electro-optical applications.

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Publication Details

Journal
The Physics of Metals and Metallography
Published
2024-12-01
DOI
https://doi.org/10.1134/s0031918x24600507
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Synthesis and Characterization of Stoichiometric Cobalt Monosulfide (CoS) Film by a Simple and Cost-Effective Screen-Printing Process

Sweta Shukla, Rayees Ahmad Zargar, Vipin Kumar, N. P. Yadav et al.
The Physics of Metals and Metallography
Chalcogenide Semiconductor Thin Films
article

Synthesis and Characterization of Stoichiometric Cobalt Monosulfide (CoS) Film by a Simple and Cost-Effective Screen-Printing Process

Sweta Shukla, Rayees Ahmad Zargar, Vipin Kumar, N. P. Yadav, Dhirendra Kumar Sharma, D. K. Dwivedi, Shivani Sharma, Parvin Kumar, Soniya Juneja
article en

Abstract

The electrical, morphological, and electro-optical behaviour of nanocrystalline cobalt monosulfide (CoS) film prepared on a clean glass substrate by screen-printing route and sintered at 250°C was studied. The nanocrystalline (with hexagonal) structure of the film was indexed by X-ray diffraction technique. The surface morphology of the film is very dense with no visible pinholes and cracks. EDX technique validates the growth of the nearly stoichiometric film. UV-VIS-DRS spectroscopy displays that the band gap (direct transition) energy (Eg) of 250°C sintered film was 1.45 eV. Photo-sensing behaviour of nanocrystalline CoS film was studied using current–voltage (I–V plot) characterization. I–V characteristics showed the change in the performance as when light is flashed on the device. p-Type conductivity for the film was observed via the hot probe technique. The accomplished results of CoS film were very awakening for electro-optical applications.

The Physics of Metals and MetallographyVol. 125(S1)
Jaypee Institute of Information Technology (IN), Institute of Management Technology (IN), Madan Mohan Malaviya University of Technology (IN), Baba Ghulam Shah Badshah University (IN), Hubei Polytechnic University (CN)
Openalex Percentile: Top 74%
Chalcogenide Semiconductor Thin Films
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Synthesis and Characterization of Stoichiometric Cobalt Monosulfide (CoS) Film by a Simple and Cost-Effective Screen-Printing Process — Sweta Shukla, Rayees Ahmad Zargar, et al. · The Physics of Metals and Metallography (2024) | TGRS Research Map | TGRS