Synthesis and Characterization of Stoichiometric Cobalt Monosulfide (CoS) Film by a Simple and Cost-Effective Screen-Printing Process
The electrical, morphological, and electro-optical behaviour of nanocrystalline cobalt monosulfide (CoS) film prepared on a clean glass substrate by screen-printing route and sintered at 250°C was studied. The nanocrystalline (with hexagonal) structure of the film was indexed by X-ray diffraction technique. The surface morphology of the film is very dense with no visible pinholes and cracks. EDX technique validates the growth of the nearly stoichiometric film. UV-VIS-DRS spectroscopy displays that the band gap (direct transition) energy (Eg) of 250°C sintered film was 1.45 eV. Photo-sensing behaviour of nanocrystalline CoS film was studied using current–voltage (I–V plot) characterization. I–V characteristics showed the change in the performance as when light is flashed on the device. p-Type conductivity for the film was observed via the hot probe technique. The accomplished results of CoS film were very awakening for electro-optical applications.
Authors
- Sweta Shukla
- Rayees Ahmad Zargar (ORCID: https://orcid.org/0000-0003-3300-7017)
- Vipin Kumar (ORCID: https://orcid.org/0000-0003-1782-7947)
- N. P. Yadav (ORCID: https://orcid.org/0000-0002-0164-4620)
- Dhirendra Kumar Sharma
- D. K. Dwivedi (ORCID: https://orcid.org/0000-0002-8334-5535)
- Shivani Sharma (ORCID: https://orcid.org/0000-0002-5466-8159)
- Parvin Kumar
- Soniya Juneja
Institutions
- Jaypee Institute of Information Technology (IN)
- Institute of Management Technology (IN)
- Madan Mohan Malaviya University of Technology (IN)
- Baba Ghulam Shah Badshah University (IN)
- Hubei Polytechnic University (CN)
Publication Details
- Journal
- The Physics of Metals and Metallography
- Published
- 2024-12-01
- DOI
- https://doi.org/10.1134/s0031918x24600507
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00