Instability Mechanism in Thermoelectric Mg<sub>2</sub>(Si,Sn) and the Role of Mg Diffusion at Room Temperature
Thermoelectric Materials In article number 2300298, Amandine Duparchy, Byungki Ryu, Johannes de Boor, and co-workers assess stability criteria and degradation in Mg2(Si,Sn), a high performance thermoelectric material. It is revealed that the reaction of loosely bound Mg with moisture and the subsequent diffusion of Mg via vacancies leads to a relatively fast degradation of Sn-rich compositions already at room temperature, while Si-rich compositions are stable, indicating superior suitability for widespread applications in Mg2(Si,Sn)-based thermoelectric generators.
Authors
- Sungjin Park (ORCID: https://orcid.org/0000-0002-9035-9687)
- Aryan Sankhla (ORCID: https://orcid.org/0000-0002-1527-6902)
- Sanyukta Ghosh (ORCID: https://orcid.org/0000-0001-7752-8653)
- Radhika Deshpande (ORCID: https://orcid.org/0000-0002-1965-3111)
- Julia Camut (ORCID: https://orcid.org/0000-0003-3398-0095)
- Amandine Duparchy (ORCID: https://orcid.org/0000-0001-5726-454X)
- Byungki Ryu (ORCID: https://orcid.org/0000-0002-0867-6457)
- Johannes de Boor (ORCID: https://orcid.org/0000-0002-1868-3167)
- Su-Dong Park
- Eckhard Mueller
Institutions
- Korea Electrotechnology Research Institute (KR)
- Justus-Liebig-Universität Gießen (DE)
- Deutsches Zentrum für Luft- und Raumfahrt e. V. (DLR) (DE)
- University of Duisburg-Essen (DE)
Publication Details
- Journal
- Small Science
- Published
- 2025-02-26
- DOI
- https://doi.org/10.1002/smsc.202570011
- Citations
- 3
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.55