History aware interference distance based Page replacement policy for Hybrid Memory
Hybrid memories comprising of DRAM-NVM or DRAM-CXL based devices are emerging as potential alternatives to overcome the drawbacks of monolithic DRAM based memories. This arrangement in the memory hierarchy will bring a paradigm shift and there is a necessity to re-look the existing policies. This work proposes an ideal page replacement policy for hybrid memories.
Authors
- Basavaraj Talawar (ORCID: https://orcid.org/0000-0001-5054-3124)
- Sadhana Rai (ORCID: https://orcid.org/0000-0001-8612-1097)
Institutions
- National Institute of Technology Karnataka (IN)
Publication Details
- Published
- 2024-12-18
- DOI
- https://doi.org/10.1109/hipcw63042.2024.00087
- Primary Topic
- Advanced Data Storage Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00