A Study on Investigation and Improvement of MOSFET Characteristics Based on Comsol Multiphysics Simulation

Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are widely used electronic components crucial to modern electronic technology due to their high efficiency, low power consumption, and high switching speeds. This article quantitatively analyzes the output and transfer characteristics of two types of N-type MOSFETs: enhancement and depletion. Additionally, we comparatively analyze N-type MOSFETs with different elemental substrates and propose material improvement schemes aimed at enhancing electron mobility and reducing power consumption. In this study, we construct a simplified N-type MOSFET model, including source, drain, and gate, with oxide thickness set by software parameters to derive the output and transfer characteristics. Using Comsol Multiphysics, we conduct simulation experiments with multi-physics field coupling to test the physical characteristics of N-type MOSFETs under varying gate and drain voltages. Our findings indicate that changes in doping density and carrier migration rate significantly impact the MOSFET’s output and transfer characteristics. Furthermore, MOSFETs with different substrates exhibit unique properties, making them suitable for diverse applications. This paper provides a detailed data-level analysis of the physical characteristics of N-type MOSFETs in various scenarios and offers practical methods for such analyses.