Modeling methodology for thermo-structural analysis of V-NAND flash memory structure

This study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect. The modeling methodology is based on a homogeneous method for investigating the thermal mechanical characteristics of a V-NAND flash memory structure. Firstly, theoretical formulation of thermo-electric behavior with Joule heating effect is presented by energy balance equation, Watt's law. Secondly, we formulate governing equation for thermo-electric-structural behaviors by defining displacement function of the RUC of V-NAND flash memory structure. The modeling methodology was verified by 3D finite element analysis. Parametric analysis was performed to investigate the thermal mechanical characteristics of a structure based on the proposed modeling methodology. Finally, optimization is performed using the proposed modeling methodology to increase the integration of V-NAND flash memory. Also, response surface methodology is used for more efficient optimization, and the response function is the failure index, which is formulated as follows based on results of the parameter analysis. Based on the results, a database of the thermal mechanical characteristics of a V-NAND flash memory structure could be obtained for applications in new-generation semiconductors. The modeling methodology features relative simplicity and computational efficiency.

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Publication Details

Journal
Scientific Reports
Published
2025-03-01
DOI
https://doi.org/10.1038/s41598-025-89936-8
Citations
3
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
2.19
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article

Modeling methodology for thermo-structural analysis of V-NAND flash memory structure

Sei‐Hyung Ryu, Sungryung Lee, Yongha Kim
3 citations
Scientific Reports
Semiconductor materials and devices
2.19
article

Modeling methodology for thermo-structural analysis of V-NAND flash memory structure

Sei‐Hyung Ryu, Sungryung Lee, Yongha Kim
article en
3 citations

Abstract

This study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect. The modeling methodology is based on a homogeneous method for investigating the thermal mechanical characteristics of a V-NAND flash memory structure. Firstly, theoretical formulation of thermo-electric behavior with Joule heating effect is presented by energy balance equation, Watt's law. Secondly, we formulate governing equation for thermo-electric-structural behaviors by defining displacement function of the RUC of V-NAND flash memory structure. The modeling methodology was verified by 3D finite element analysis. Parametric analysis was performed to investigate the thermal mechanical characteristics of a structure based on the proposed modeling methodology. Finally, optimization is performed using the proposed modeling methodology to increase the integration of V-NAND flash memory. Also, response surface methodology is used for more efficient optimization, and the response function is the failure index, which is formulated as follows based on results of the parameter analysis. Based on the results, a database of the thermal mechanical characteristics of a V-NAND flash memory structure could be obtained for applications in new-generation semiconductors. The modeling methodology features relative simplicity and computational efficiency.

Scientific ReportsVol. 15(1)
Chungnam National University (KR)
Openalex Percentile: Top 13%
Semiconductor materials and devices
2.19
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