Improving the Thermal Stability of Inverted Organic Solar Cells by Mitigating the Undesired MoO<sub>3</sub> Diffusion toward Cathodes with a High-Ionization Potential Interface Layer

Understanding the thermal degradation mechanism of organic solar cells (OSCs) and developing strategies to enhance their thermal stability are crucial before they can be commercialized. In this paper, we demonstrated that in a structure-inverted ITO/ZnO/PM6/L8-BO/TCTA/MoO<sub>3</sub>/Ag solar cell, a thin 4,4',4″-tris(carbazol-9-yl)-triphenylamine (TCTA) film between MoO<sub>3</sub> and PM6:L8-BO can significantly suppress the fast short circuit current (<i>J</i><sub>SC</sub>) loss and the slow but continuous open circuit voltage (<i>V</i><sub>OC</sub>) and fill factor (FF) decay upon 150 °C thermal annealing. XPS and TOF-SIMS results confirm that thermal annealing leads to the formation of (MoO<sub>3</sub>)<sup>-</sup> at the MoO<sub>3</sub>/PM6/L8-BO interface and the diffusion of (MoO<sub>3</sub>)<sup>-</sup> through the photoactive layer. The diffused (MoO<sub>3</sub>)<sup>-</sup> act as acceptor-type impurities that leads to <i>p</i>-doping of the photoactive layer, increasing charge recombination within the photoactive layer and reducing <i>J</i><sub>SC</sub>. In addition, the accumulation of (MoO<sub>3</sub>)<sup>-</sup> at the cathode interface leads to <i>p</i>-doping at the cathode interface and consequently decreases <i>V</i><sub>OC</sub> and FF. The thermally induced interfacial degradation model is supported by detailed drift-diffusion simulations. The TCTA-interlayer minimizes the (MoO<sub>3</sub>)<sup>-</sup> diffusion, thereby stabilizing the cell performance against thermal annealing. The TCTA-incorporating cells showed a high PCE of over 16% after high-temperature hot-press encapsulation, and the resulting cells showed excellent thermal stability under 85 °C.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-03-01
DOI
https://doi.org/10.1021/acsami.4c21773
Citations
12
Primary Topic
Organic Electronics and Photovoltaics
Type
article
Field-Weighted Citation Impact
8.77

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article

Improving the Thermal Stability of Inverted Organic Solar Cells by Mitigating the Undesired MoO3 Diffusion toward Cathodes with a High-Ionization Potential Interface Layer

Carsten Deibel, Jian Qin, Qian Xi, Ronald Österbacka et al.
12 citations
ACS Applied Materials & Interfaces
Organic Electronics and Photovoltaics
8.77
article

Improving the Thermal Stability of Inverted Organic Solar Cells by Mitigating the Undesired MoO3 Diffusion toward Cathodes with a High-Ionization Potential Interface Layer

Carsten Deibel, Jian Qin, Qian Xi, Ronald Österbacka, Maria Saladina, Yifan Li, Oskar J. Sandberg, Rong Huang, Na Wu, Chang‐Qi Ma
article en
12 citations

Abstract

Understanding the thermal degradation mechanism of organic solar cells (OSCs) and developing strategies to enhance their thermal stability are crucial before they can be commercialized. In this paper, we demonstrated that in a structure-inverted ITO/ZnO/PM6/L8-BO/TCTA/MoO<sub>3</sub>/Ag solar cell, a thin 4,4',4″-tris(carbazol-9-yl)-triphenylamine (TCTA) film between MoO<sub>3</sub> and PM6:L8-BO can significantly suppress the fast short circuit current (<i>J</i><sub>SC</sub>) loss and the slow but continuous open circuit voltage (<i>V</i><sub>OC</sub>) and fill factor (FF) decay upon 150 °C thermal annealing. XPS and TOF-SIMS results confirm that thermal annealing leads to the formation of (MoO<sub>3</sub>)<sup>-</sup> at the MoO<sub>3</sub>/PM6/L8-BO interface and the diffusion of (MoO<sub>3</sub>)<sup>-</sup> through the photoactive layer. The diffused (MoO<sub>3</sub>)<sup>-</sup> act as acceptor-type impurities that leads to <i>p</i>-doping of the photoactive layer, increasing charge recombination within the photoactive layer and reducing <i>J</i><sub>SC</sub>. In addition, the accumulation of (MoO<sub>3</sub>)<sup>-</sup> at the cathode interface leads to <i>p</i>-doping at the cathode interface and consequently decreases <i>V</i><sub>OC</sub> and FF. The thermally induced interfacial degradation model is supported by detailed drift-diffusion simulations. The TCTA-interlayer minimizes the (MoO<sub>3</sub>)<sup>-</sup> diffusion, thereby stabilizing the cell performance against thermal annealing. The TCTA-incorporating cells showed a high PCE of over 16% after high-temperature hot-press encapsulation, and the resulting cells showed excellent thermal stability under 85 °C.

ACS Applied Materials & InterfacesVol. 17(10)
University of Science and Technology of China (CN), Åbo Akademi University (FI), Chinese Academy of Sciences (CN), Chemnitz University of Technology (DE), Suzhou Institute of Nano-tech and Nano-bionics (CN)
Deutsche Forschungsgemeinschaft, National Natural Science Foundation of China, Academy of Finland, Chinese Academy of Sciences, Suzhou Institute of Nanotechnology, Chinese Academy of Sciences, Science and Technology Program of Suzhou
Affordable and clean energy
Openalex Percentile: Top 2%
Organic Electronics and Photovoltaics
8.77
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