On the Memristivity of Doped Oxide Perovskites

This study analyzes the results of research on the bipolar effect of resistive switching in heterojunctions based on high-temperature superconductors (HTSC) Bi2Sr2CaCu2O8+y, YBa2Cu3O7–δ, Ba0.6K0.4BiO3–x, and doped manganites La1–xSrxMnO3–y. It demonstrates how the functional properties of HTSC can be used to create memristive structures on their basis. The ability to undergo a metal–insulator transition under oxygen doping, the anisotropy of electronic transport, and the existence of charge reservoirs through which copper–oxygen conducting regions are doped, are the key functional properties of HTSC that form the basis of memristor operation. Research on the structure, transport, and superconducting properties of the metastable OFF and ON states of memristors shows that macroscopic phase separation on the surface of oxygen-containing epitaxial films of HTSC and doped manganites is a determining factor in the formation of memristive properties in structures based on them. The memristive properties of HTSC appear on the phase diagram in the phase-separation region, which is characteristic of strongly correlated electron systems.