Epi-grown broadband reflector for InAs-based thermophotovoltaics

Reflecting sub-bandgap photons is crucial for maximizing the efficiency of thermophotovoltaic devices. However, existing metal-deposited reflectors rely on back-side metallization, which cannot be grown epitaxially, necessitating additional processing steps. In this study, we fabricate InAs-based thermophotovoltaic devices featuring a straightforward, epitaxially grown sub-bandgap reflector composed of a single layer of n-doped InAs at a doping concentration of 2.4 × 10 19 cm −3 . This high doping produces long-wavelength metallic-like reflection, and our devices demonstrate high sub-bandgap reflectivity from 3.5 to 17 μm, achieving up to 93 % reflectivity compared to 30–40 % for designs without the reflector. Using a calibrated optical model, we predict that the sub-bandgap reflectivity of this layer enhances spectral efficiency from 38 % to 79 % under a 600 K normally incident blackbody spectrum. This improvement rivals that of a standard gold back reflector, which achieves a spectral efficiency of 94 %. Additionally, our predictive electrical model, calibrated with fabricated devices, indicates that the reflective layer does not adversely affect the electrical properties of the thermophotovoltaic devices. This sub-bandgap reflector can be integrated into existing InAs-based thermophotovoltaic fabrication processes, eliminating complex substrate removal steps required for traditional gold reflectors. • Demonstrated sub-bandgap reflectivity of up to 93 % for devices with a n-InAs reflective layer. • The reflective layer can improve spectral efficiency from 38 % to 79 %, under a 600 K normally incident blackbody spectrum. • Measurement and simulation results reveal that the reflective layer does not adversely affect the electrical properties of the devices.