Formation of Nanostructures on the Surface of Aluminum–Silicon Films By Bombardment with Low-Energy Argon Ions of Inductive RF-Discharge Plasma

The results of an experimental study of changes in the chemical composition and surface topography of two-component AlSi thin films with an initial Si concentration of 1% under low-energy ion-plasma sputtering are presented. Using scanning electron microscopy, scanning Auger electron spectroscopy, and secondary-ion mass spectrometry, it is established that when irradiated with argon ions with an energy from 40 to 200 eV, the concentration of Si in the surface layer of the film increases by more than an order of magnitude. Nanostructures in the form of hills with a diameter of 20–50 nm and a height of 15–30 nm are formed on the surface, which can be identified as silicon nanostructures. The reason for enrichment of the surface with Si and the formation of nanostructures may be differences in the sputtering coefficients and threshold values of the sputtering energy of the film components.