On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

The composition, band gap, morphology, crystal structure, and electrophysical properties of the surface layers of the Si/NiSi2/Si(111) film system obtained by solid-phase epitaxy at different substrate temperatures are studied using Auger-electron spectroscopy, measuring the intensity of light transmitted through the sample and the specific resistance of the surface, scanning electron microscopy, and high-energy electron diffraction. It is established that the interface between the Si/NiSi2 and NiSi2/Si(111) layers is abrupt, and the thickness of the transition layers does not exceed 4–5 nm. It is shown that it is impossible to obtain a Si/NiSi2/Si(111) three-layer system with a thickness of Si and NiSi2 of less than 20–30 nm using solid-phase epitaxy.