Analysis of Dual Material Gate InSb/Si Heterojunction Silicon on Insulator Tunnel Field Effect Transistor (DMG-HJ-SOI-TFET) Biosensor for CREB-2 Protein Detection

Breast Cancer has emerged as a prominent cause of cancer-related mortality in recent years, and it is now one of the most commonly diagnosed type of carcinoma. Breast Cancer identification at an early stage has the potential to drastically cut mortality rates by allowing for sophisticated medical therapies. The Dual Material Gate InSb/Si (Indium antimonide/silicon) Heterojunction Silicon on Insulator Tunnel Field Effect Transistor (DMG-HJ-SOI-TFET) device, specifically built for the label free identification of breast cancer cells (BCC), is comprehensively examined in this study. Dielectric modulation is used for label free detection of BCC by utilising their distinct dielectric constant values (K). The DMG-HJ-SOI-TFET device's heterojunction architecture improves both stability and sensitivity by allowing charge carriers to flow across different energy bands. The device employs an InSb/Si heterojunction with an N + pocket at the drain-channel junction. The nanocavity is formed between the gate electrode and the channel region, towards the drain side. InSb is utilised as a source material to increase the ON current. The simulation analysis exhibits high sensitivity, particularly for T47D breast cancer cells, with a dielectric constant K = 32, a subthreshold voltage of 39 mV/dec, and an on-current sensitivity SIon​of 104 was achieved. The key advantages of the proposed structure are its great flexibility, portability, minimal power consumption, and sensitivity, opening up new opportunities for the development of highly sensitive biosensors. The device exhibits excellent control over the channel and reduces leakage current. The biomolecule sensing mechanism relies on ambipolar current, which depends on the dielectric constant of the nanocavity. Increased dielectric constant leads to improved sensitivity of the device. This biosensor exhibit enhanced sensitivity for biomolecule detection at low operating voltages, leading to significant improvements in both sensitivity and selectivity. Its ability to provide precise sensitivity assessments makes it a promising candidate for point-of-care breast cancer diagnostics.

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Publication Details

Journal
Sensing and Imaging
Published
2025-03-01
DOI
https://doi.org/10.1007/s11220-025-00558-w
Citations
10
Primary Topic
Nanowire Synthesis and Applications
Type
article
Field-Weighted Citation Impact
6.74
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article

Analysis of Dual Material Gate InSb/Si Heterojunction Silicon on Insulator Tunnel Field Effect Transistor (DMG-HJ-SOI-TFET) Biosensor for CREB-2 Protein Detection

Deepak Kumar Panda, Ahmed Nabih Zaki Rashed, Pratikhya Raut
10 citations
Sensing and Imaging
Nanowire Synthesis and Applications
6.74
article

Analysis of Dual Material Gate InSb/Si Heterojunction Silicon on Insulator Tunnel Field Effect Transistor (DMG-HJ-SOI-TFET) Biosensor for CREB-2 Protein Detection

Deepak Kumar Panda, Ahmed Nabih Zaki Rashed, Pratikhya Raut
article en
10 citations

Abstract

Breast Cancer has emerged as a prominent cause of cancer-related mortality in recent years, and it is now one of the most commonly diagnosed type of carcinoma. Breast Cancer identification at an early stage has the potential to drastically cut mortality rates by allowing for sophisticated medical therapies. The Dual Material Gate InSb/Si (Indium antimonide/silicon) Heterojunction Silicon on Insulator Tunnel Field Effect Transistor (DMG-HJ-SOI-TFET) device, specifically built for the label free identification of breast cancer cells (BCC), is comprehensively examined in this study. Dielectric modulation is used for label free detection of BCC by utilising their distinct dielectric constant values (K). The DMG-HJ-SOI-TFET device's heterojunction architecture improves both stability and sensitivity by allowing charge carriers to flow across different energy bands. The device employs an InSb/Si heterojunction with an N + pocket at the drain-channel junction. The nanocavity is formed between the gate electrode and the channel region, towards the drain side. InSb is utilised as a source material to increase the ON current. The simulation analysis exhibits high sensitivity, particularly for T47D breast cancer cells, with a dielectric constant K = 32, a subthreshold voltage of 39 mV/dec, and an on-current sensitivity SIon​of 104 was achieved. The key advantages of the proposed structure are its great flexibility, portability, minimal power consumption, and sensitivity, opening up new opportunities for the development of highly sensitive biosensors. The device exhibits excellent control over the channel and reduces leakage current. The biomolecule sensing mechanism relies on ambipolar current, which depends on the dielectric constant of the nanocavity. Increased dielectric constant leads to improved sensitivity of the device. This biosensor exhibit enhanced sensitivity for biomolecule detection at low operating voltages, leading to significant improvements in both sensitivity and selectivity. Its ability to provide precise sensitivity assessments makes it a promising candidate for point-of-care breast cancer diagnostics.

Sensing and ImagingVol. 26(1)
Siddhartha Medical College (IN), Menoufia University (EG), Amrita Vishwa Vidyapeetham (IN), Saveetha University (IN)
Affordable and clean energy
Openalex Percentile: Top 3%
Nanowire Synthesis and Applications
6.74
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