Emission driver circuit based on metal-oxide thin-film transistors capable of leakage current suppression for output stability

We proposed an emission driver circuit based on metal-oxide thin-film transistors (TFTs), which is designed to ensure stable output characteristics by suppressing leakage currents at the main nodes when TFTs are operated in depletion mode. To do this, we employed control signals with different low-level voltages and switching TFTs connected to the series-connected two transistors. The simulation results indicate that the featured circuit operates stably within a threshold voltage range of −3 V to 4 V, showing improved output characteristics compared to the conventional circuit. The circuit was fabricated with dimensions of 79.4 × 700 µm2 based on 320 pixels per inch, and the resulting fabricated circuit exhibits a stable output voltage. These results suggest that the proposed emission driver circuit operates reliably when TFTs are operated in depletion mode.