Spin-Dependent Hole Transport in GaAs/GaAlAs Double-Barrier Heterostructure and the Analysis of Dwell Time

We theoretically investigate the hole transport properties in GaAs/GaAlAs double-barrier heterostructure. It is found that the barrier width plays an important role in the hole transmission probability, spin-polarization efficiency, tunneling time and dwell time of holes. The wider barrier has high spin-polarization for the light hole (LH), whereas the heavy hole (HH) is completely spin-polarized irrespective of the barrier width. The spin-separation of LH and HH is minimal at wider barriers. The tunneling time of LH and HH both increases as the barrier width increases. Spin-down holes (LH and HH) have higher tunneling time than spin-up holes. The dwell time of holes has the minimum value of the narrow barrier. All the results for LH and HH are compared.