Structural Evolution of Silicon Nitride Anodes during Electrochemical Lithiation

Silicon nitride (SiN <sub><i>x</i></sub> ), a conversion-alloying lithium-ion battery electrode with excellent potential to replace silicon and graphite anodes, offers improved cycle stability and fast-charging capabilities. During the formation cycle(s), SiN <sub><i>x</i></sub> irreversibly converts into a mixture of lithiated silicon and nitridosilicate matrix. However, beyond this basic understanding, there is limited fundamental insight into how the post-conversion structure results in improved electrochemical performance. This significantly hinders the optimization and commercialization prospects of SiN <sub><i>x</i></sub> anodes. Herein, <i>operando</i> electrochemical atomic force microscopy is used to uncover the morphological and chemo-mechanical changes of SiN <sub><i>x</i></sub> thin films during the conversion reaction. We elucidate that the post-conversion SiN <sub><i>x</i></sub> forms silicon domains embedded within a matrix with a core-shell-like structure comprised of a stiff outer nitridosilicate surface and softer inner Si-rich core. The silicon domains that form have very stable dimensions (∼100 nm in diameter) that, crucially, remain smaller than the critical cracking threshold of silicon. This results in a more mechanically robust anode, anticipated to be free from the adverse effects of cracking, pulverization, and subsequent capacity fade. Our work marks an important advance in the fundamental understanding of silicon nitride anodes and offers a pathway to their incorporation into next-generation batteries.

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Publication Details

Journal
ACS electrochemistry.
Published
2025-02-28
DOI
https://doi.org/10.1021/acselectrochem.4c00230
Citations
4
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
2.92

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article

Structural Evolution of Silicon Nitride Anodes during Electrochemical Lithiation

Stefan Guldin, Adam J. Lovett, Brandon Frost, Paul Robert Shearing et al.
4 citations
ACS electrochemistry.
Semiconductor materials and devices
2.92
article

Structural Evolution of Silicon Nitride Anodes during Electrochemical Lithiation

Stefan Guldin, Adam J. Lovett, Brandon Frost, Paul Robert Shearing, Máté Füredi, Thomas Samuel Miller, Liam Bird, Samia Said
article en
4 citations

Abstract

Silicon nitride (SiN <sub><i>x</i></sub> ), a conversion-alloying lithium-ion battery electrode with excellent potential to replace silicon and graphite anodes, offers improved cycle stability and fast-charging capabilities. During the formation cycle(s), SiN <sub><i>x</i></sub> irreversibly converts into a mixture of lithiated silicon and nitridosilicate matrix. However, beyond this basic understanding, there is limited fundamental insight into how the post-conversion structure results in improved electrochemical performance. This significantly hinders the optimization and commercialization prospects of SiN <sub><i>x</i></sub> anodes. Herein, <i>operando</i> electrochemical atomic force microscopy is used to uncover the morphological and chemo-mechanical changes of SiN <sub><i>x</i></sub> thin films during the conversion reaction. We elucidate that the post-conversion SiN <sub><i>x</i></sub> forms silicon domains embedded within a matrix with a core-shell-like structure comprised of a stiff outer nitridosilicate surface and softer inner Si-rich core. The silicon domains that form have very stable dimensions (∼100 nm in diameter) that, crucially, remain smaller than the critical cracking threshold of silicon. This results in a more mechanically robust anode, anticipated to be free from the adverse effects of cracking, pulverization, and subsequent capacity fade. Our work marks an important advance in the fundamental understanding of silicon nitride anodes and offers a pathway to their incorporation into next-generation batteries.

ACS electrochemistry.Vol. 1(6)
London Centre for Nanotechnology (GB), University of Oxford (GB), The Faraday Institution (GB), Semilab (Hungary) (HU), University College London (GB), Technical University of Munich (DE)
Faraday Institution, Engineering and Physical Sciences Research Council, Science and Technology Facilities Council
Openalex Percentile: Top 10%
Semiconductor materials and devices
2.92
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