Effect of capping on the Dirac semimetal Cd<sub>3</sub>As<sub>2</sub> on Si grown via molecular beam epitaxy

Given the promising applications of large magnetoresistance in the Dirac semimetal cadmium arsenide (Cd<sub>3</sub>As<sub>2</sub>), extensive research into Si-compatible Cd<sub>3</sub>As<sub>2</sub>devices is highly desirable. To prevent surface degradation and oxidation, the implementation of a protection layer on Cd<sub>3</sub>As<sub>2</sub>is imperative. In this study, two vastly different protecting layers were prepared on top of two Cd<sub>3</sub>As<sub>2</sub>samples. A zinc telluride layer was grown on top of one Cd<sub>3</sub>As<sub>2</sub>film, giving rise to a ten-fold increased mobility, compared to that of the pristine Cd<sub>3</sub>As<sub>2</sub>sample. Interestingly, unusual negative magnetoresistance is observed in the hexagonal boron nitride-capped Cd<sub>3</sub>As<sub>2</sub>device when a magnetic field is applied perpendicularly to the Cd<sub>3</sub>As<sub>2</sub>plane. This is in sharp contrast to the chiral anomaly that requires a magnetic field parallel to the Cd<sub>3</sub>As<sub>2</sub>plane. We suggest that a protection layer on molecular beam epitaxy-grown Cd<sub>3</sub>As<sub>2</sub>should be useful for realising its great device applications in magnetic sensing.

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Publication Details

Journal
Nanotechnology
Published
2025-02-28
DOI
https://doi.org/10.1088/1361-6528/adbb74
Citations
1
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
1.25

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Effect of capping on the Dirac semimetal Cd3As2 on Si grown via molecular beam epitaxy

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Effect of capping on the Dirac semimetal Cd3As2 on Si grown via molecular beam epitaxy

Chiashain Chuang, Cheng-Hsueh Yang, Takashi Taniguchi, Hsin-Hsuan Lee, Nobuyuki Aoki, Kenji Watanabe, Chi‐Te Liang, Jie‐Ying Lee, Ji-Wei Ci, Chun-Wei Kuo, Meng-Ting Wu, Tianshun Xie, Jyh-Shyang Wang, Wei‐Chen Lin
article en
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Abstract

Given the promising applications of large magnetoresistance in the Dirac semimetal cadmium arsenide (Cd<sub>3</sub>As<sub>2</sub>), extensive research into Si-compatible Cd<sub>3</sub>As<sub>2</sub>devices is highly desirable. To prevent surface degradation and oxidation, the implementation of a protection layer on Cd<sub>3</sub>As<sub>2</sub>is imperative. In this study, two vastly different protecting layers were prepared on top of two Cd<sub>3</sub>As<sub>2</sub>samples. A zinc telluride layer was grown on top of one Cd<sub>3</sub>As<sub>2</sub>film, giving rise to a ten-fold increased mobility, compared to that of the pristine Cd<sub>3</sub>As<sub>2</sub>sample. Interestingly, unusual negative magnetoresistance is observed in the hexagonal boron nitride-capped Cd<sub>3</sub>As<sub>2</sub>device when a magnetic field is applied perpendicularly to the Cd<sub>3</sub>As<sub>2</sub>plane. This is in sharp contrast to the chiral anomaly that requires a magnetic field parallel to the Cd<sub>3</sub>As<sub>2</sub>plane. We suggest that a protection layer on molecular beam epitaxy-grown Cd<sub>3</sub>As<sub>2</sub>should be useful for realising its great device applications in magnetic sensing.

NanotechnologyVol. 36(16)
National Institute of Standards and Technology (US), Chung Yuan Christian University (TW), Chiba University (JP), National Taiwan University (TW), National Institute for Materials Science (JP), National Tsing Hua University (TW), Institute of Information Science, Academia Sinica (TW), Physical Measurement Laboratory (US), Taiwan Semiconductor Manufacturing Company (Taiwan) (TW), Academia Sinica (TW)
Chung Yuan Christian University, Chiba University, Japan Society for the Promotion of Science
Life in Land
Openalex Percentile: Top 24%
Topological Materials and Phenomena
1.25
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