Photo-modulated magnetoresistance in a ferromagnetic/normal/ferromagnetic tunnel junction based on monolayer black phosphorene
We use the Floquet theory and the Landauer-Büttiker formula to investigate the transport characteristics of a ferromagnetic/normal/ferromagnetic tunnel junction based on monolayer black phosphorene under an off-resonant circularly polarized light (CPL). The results show that the CPL can control the transmission spectrum. In fact, the transmission gap of the antiparallel magnetized configuration is significantly broadened, and the electron blocking effect is enhanced. The transmission of the parallel magnetized configuration shows significant anisotropy and strong wave vector filtering effect. We also demonstrate that the CPL enhances the difference between the conductance of the parallel and antiparallel magnetized configurations, which in turn leads to a significant increase in tunneling magnetoresistance (TMR), even reaching TMR = 1. In particular, under the combined action of polarized light and gate voltage, the TMR in the conduction band region increases, while the TMR in the valence band region decreases. Our results will contribute to the development of optically controllable TMR devices.
Authors
- Dali Wang (ORCID: https://orcid.org/0000-0001-5323-0801)
- Guojun Jin (ORCID: https://orcid.org/0000-0001-8184-9249)
- Yun Li (ORCID: https://orcid.org/0000-0002-3697-0047)
Institutions
- Kunming University of Science and Technology (CN)
- Nanjing Tech University (CN)
- Kunming University (CN)
- Yunnan University (CN)
- Collaborative Innovation Center of Advanced Microstructures (CN)
- Anhui Normal University (CN)
- Nanjing University (CN)
Publication Details
- Journal
- Journal of Physics Condensed Matter
- Published
- 2025-02-28
- DOI
- https://doi.org/10.1088/1361-648x/adbba7
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China