Development of Ultra-low Power Ultra-low Frequency Oscillator using GIDL current for Edge AI Devices for Long-Term and Intermittent Monitoring
This paper describes a new ultra-low power and ultra-low frequency oscillator using the GIDL current used in edge AI devices for long-term and intermittent monitoring applications. Various characteristics of GIDL current were measured and compared with the subthreshold current. An ultra-low frequency GIDL ring oscillator was designed and evaluated based on the measurement results. As a result, ultra-low frequency oscillation from 0.94 to 5.1 Hz was successfully achieved. An extremely small circuit area was achieved because integrated resistors and capacitors were not used. From the power consumption analysis, a new low-power design was conducted from the viewpoints of "shortening the signal transition time of the buffer circuit" and "reducing the short-circuit current of the buffer circuit," and ultra-low power operation of 71.6 pW was successfully achieved in circuit simulation. GIDL ring oscillator is a promising candidate for an ultra-low power and ultra-low frequency oscillator with high environmental stability.
Authors
- Akikatsu Kataura
- Bang Du (ORCID: https://orcid.org/0000-0002-8039-7591)
- Ryô Hasegawa (ORCID: https://orcid.org/0009-0007-0295-6726)
- Kohei Nakamura (ORCID: https://orcid.org/0000-0002-8419-9461)
- Takafumi Fukushima (ORCID: https://orcid.org/0000-0003-2303-8178)
- Bo Huang (ORCID: https://orcid.org/0000-0002-3025-0532)
- Tetsu Tanaka (ORCID: https://orcid.org/0000-0003-0780-8689)
- K. Kiyoyama (ORCID: https://orcid.org/0000-0002-5367-926X)
Institutions
- Nagasaki Institute of Applied Science (JP)
- Tohoku University (JP)
Publication Details
- Journal
- IEEJ Transactions on Electronics Information and Systems
- Published
- 2025-02-28
- DOI
- https://doi.org/10.1541/ieejeiss.145.391
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00