Large-scale Integrated Silicon Thermoelectric Device
This article reviews the development of Si-based thermoelectric device conducted by the author’s group. A series of integrated thermoelectric devices of silicon-nanowire thermoelements were fabricated with a matured and standard Si-CMOS process, demonstrating scaling rules for miniaturization and large-scale integration on thermoelectric performance. The thermoelectric device exhibited a high specific power generation capacity of 0.9 µW/cm2K2. The optimum device layout to maximize the power generation capacity will be discussed in detail.
Authors
- Takanobu Watanabe (ORCID: https://orcid.org/0000-0002-9421-8195)
Institutions
- Waseda University (JP)
Publication Details
- Journal
- IEEJ Transactions on Electronics Information and Systems
- Published
- 2025-02-28
- DOI
- https://doi.org/10.1541/ieejeiss.145.371
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00