Temperature Sensing Properties of Reverse-Biased Schottky Barrier Diodes and their Application to Educational Tools
Investigation of the temperature sensing characteristics of reverse-biased Schottky barrier diodes has revealed that they exhibit a greater rate of change than usual temperature sensors such as thermistors. They can switch transistors on with a temperature change of a finger-pick level, making it easier to conduct experiments in class. Furthermore, the reverse-biased Schottky barrier diode can be replaced with a photodiode to switch the transistor on by room light, without replacing other circuit components. Classroom practices performed in a technical high school show that the devices are promising as educational tools for temperature sensors.
Authors
- Shigeki Otani
- Hideki Koyama
- Kanata Toyoshima
Institutions
- Hyogo University of Teacher Education (JP)
Publication Details
- Journal
- IEEJ Transactions on Fundamentals and Materials
- Published
- 2025-02-28
- DOI
- https://doi.org/10.1541/ieejfms.145.45
- Primary Topic
- Semiconductor materials and interfaces
- Type
- article
- Field-Weighted Citation Impact
- 0.00