P-n junction inductors considering temperature variations in the mixed tunneling and avalanche breakdown regime for wideband matching applications

In this paper, a p-n junction inductor design in the mixed tunneling and avalanche breakdown region at different temperatures is presented to achieve loss reduction and wide bandwidth simultaneously for the first time. The junction resistance and inductance from the generation region are properly determined. In addition, the appropriate space charge resistance and the extension resistance are also considered to achieve a wide bandwidth. The results show a decrease in power losses in S-band applications compared to previous work. Therefore, this study obtains the low loss and wide bandwidth p-n junction inductors for practical microwave circuit applications. The dependence of resistance and inductance on current can provide advantages of tunability for RF circuits to mitigate the influence of temperature and process variations on impedance matching. The p-n junction inductors with temperature considered can be applied to the microwave circuit design to achieve small area, low loss, and wide bandwidth characteristics.