Rare Earth-Driven Photogenerated Charge Separation in SnO<sub>2</sub>@Y<sub>2</sub>O<sub>3</sub> Heterojunctions for Enhanced H<sub>2</sub>S Sensing at Room Temperature

Although conventional heat-activated gas sensors effectively detect air pollutants such as highly toxic H<sub>2</sub>S and NO<sub>2</sub>, their high operating temperatures increase the risk of explosions in flammable gas environments, limiting their applications. In this study, we report a novel composite material of SnO<sub>2</sub>@Y<sub>2</sub>O<sub>3</sub> synthesized using an electrospinning-solvothermal method. This is the first demonstration of gas sensing at room temperature using SnO<sub>2</sub>@Y<sub>2</sub>O<sub>3</sub> heterostructures under low-power ultraviolet light. This heterostructure has excellent H<sub>2</sub>S sensing performance, thanks to its rich adsorbed oxygen species [21.01%, significantly higher than pure SnO<sub>2</sub> (11.55%)] and enhanced interfacial charge transfer. The introduction of the <i>Y</i> element greatly reduces the photogenerated electron-hole recombination efficiency of the composite material under UV light. Furthermore, the SnO<sub>2</sub>@Y<sub>2</sub>O<sub>3</sub> sensor's response to 10 ppm of H<sub>2</sub>S under UV irradiation is 318.3% higher than that of the pure SnO<sub>2</sub> sensor. In addition, the sensor has excellent selectivity to H<sub>2</sub>S due to the interface potential barrier between the two, and the response is at least 6.8 times that of other interfering gases. DFT calculations further show that the adsorption energy of H<sub>2</sub>S on the SnO<sub>2</sub>@Y<sub>2</sub>O<sub>3</sub> heterojunction is significantly higher than that on the SnO<sub>2</sub> (110) surface. In addition, the electron transfer amount of H<sub>2</sub>S on the SnO<sub>2</sub>@Y<sub>2</sub>O<sub>3</sub> heterojunction (0.385 e) is 218.2% higher than that on the SnO<sub>2</sub> (110) surface (0.121 e). This work proposes a new strategy for improving the performance of gas sensors by introducing element <i>Y</i> and light excitation, providing a low-temperature, safe, and highly selective sensing platform for toxic gases such as H<sub>2</sub>S.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-02-28
DOI
https://doi.org/10.1021/acsami.4c19811
Citations
5
Primary Topic
Gas Sensing Nanomaterials and Sensors
Type
article
Field-Weighted Citation Impact
3.65

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article

Rare Earth-Driven Photogenerated Charge Separation in SnO2@Y2O3 Heterojunctions for Enhanced H2S Sensing at Room Temperature

Kechang Qian, Shouhang Fu, Shupeng Sun, Zhixin Luo et al.
5 citations
ACS Applied Materials & Interfaces
Gas Sensing Nanomaterials and Sensors
3.65
article

Rare Earth-Driven Photogenerated Charge Separation in SnO2@Y2O3 Heterojunctions for Enhanced H2S Sensing at Room Temperature

Kechang Qian, Shouhang Fu, Shupeng Sun, Zhixin Luo, Yanhui Sun, Dong Han, Jiawen Cui
article en
5 citations

Abstract

Although conventional heat-activated gas sensors effectively detect air pollutants such as highly toxic H<sub>2</sub>S and NO<sub>2</sub>, their high operating temperatures increase the risk of explosions in flammable gas environments, limiting their applications. In this study, we report a novel composite material of SnO<sub>2</sub>@Y<sub>2</sub>O<sub>3</sub> synthesized using an electrospinning-solvothermal method. This is the first demonstration of gas sensing at room temperature using SnO<sub>2</sub>@Y<sub>2</sub>O<sub>3</sub> heterostructures under low-power ultraviolet light. This heterostructure has excellent H<sub>2</sub>S sensing performance, thanks to its rich adsorbed oxygen species [21.01%, significantly higher than pure SnO<sub>2</sub> (11.55%)] and enhanced interfacial charge transfer. The introduction of the <i>Y</i> element greatly reduces the photogenerated electron-hole recombination efficiency of the composite material under UV light. Furthermore, the SnO<sub>2</sub>@Y<sub>2</sub>O<sub>3</sub> sensor's response to 10 ppm of H<sub>2</sub>S under UV irradiation is 318.3% higher than that of the pure SnO<sub>2</sub> sensor. In addition, the sensor has excellent selectivity to H<sub>2</sub>S due to the interface potential barrier between the two, and the response is at least 6.8 times that of other interfering gases. DFT calculations further show that the adsorption energy of H<sub>2</sub>S on the SnO<sub>2</sub>@Y<sub>2</sub>O<sub>3</sub> heterojunction is significantly higher than that on the SnO<sub>2</sub> (110) surface. In addition, the electron transfer amount of H<sub>2</sub>S on the SnO<sub>2</sub>@Y<sub>2</sub>O<sub>3</sub> heterojunction (0.385 e) is 218.2% higher than that on the SnO<sub>2</sub> (110) surface (0.121 e). This work proposes a new strategy for improving the performance of gas sensors by introducing element <i>Y</i> and light excitation, providing a low-temperature, safe, and highly selective sensing platform for toxic gases such as H<sub>2</sub>S.

ACS Applied Materials & InterfacesVol. 17(10)
Dalian University of Technology (CN), Faculty (United Kingdom) (GB), Dalian Minzu University (CN)
Natural Science Foundation of Liaoning Province, Department of Education of Liaoning Province, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities
Climate action
Openalex Percentile: Top 8%
Gas Sensing Nanomaterials and Sensors
3.65
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