Multi-Physics Field Simulation of Dual Microwave Coaxial Linear Plasma

A large-area and uniformly distributed plasma is significant for microwave plasma chemical vapor deposition (MPCVD). In this research, argon was utilized as the working gas to create a large-area, high-density, and evenly distributed microwave coaxial linear plasma. The simulation is used to determine the effects of varying power and gas pressure on the electron density and electron temperature of the plasma. The results of the simulation demonstrate that the distribution area of the high-density plasma gradually expands as the microwave power or gas pressure increases. The high-density plasma expands to the majority of the reaction chamber when the power is greater than 1200W (gas pressure 80Pa) or the gas pressure is granter than 160Pa (power 800W), and the axial electron density and electron temperature are on the same order of magnitude. On this basis, this paper further proposes a method of two-way microwave-excited plasma. The majority of the reaction chamber's volume is filled with high-density plasma when the microwave power of each way reaches 800W (air pressure 80Pa), and the electron density and electron temperature in the axial direction are uniformly distributed.