Exchange Coupling-Induced Spin Dynamic Damping Modulation at the Py/FeMn Interface

The spin dynamic damping is crucial for applications in magnetic memory, sensors, and logical systems. Here, focusing on interfacial antiferromagnetic exchange coupling, the magneto-dynamics of Ni<sub>80</sub>Fe<sub>20</sub>(Py)/Fe<sub>50</sub>Mn<sub>50</sub>(FeMn) bilayers is systematically investigated. When the FeMn thickness exceeds 5 nm, an interfacial exchange bias field appears, significantly increasing the spin dynamic damping of the Py/FeMn bilayer to around 0.015. A Cu spacer is introduced between the Py and FeMn layers, and the interfacial exchange bias effect is eliminated following a dramatic decrease in the spin dynamic damping. However, a slight damping increment is observed in Py/Cu/FeMn trilayers, which is attributed to the spin pumping mechanism. Based on spin pumping theory, the estimated interfacial spin mixing conductance is 3.44 nm<sup>-2</sup> in Py/Cu/FeMn, which is attributed to the weak spin-orbit coupling of the FeMn layer. These findings indicate that the dynamic damping of Py/FeMn bilayers is primarily driven by interfacial exchange coupling rather than the spin pumping effect. Furthermore, by employing FeMn as an insertion at Py/Pt and Py/Cu interfaces, we demonstrate the short spin diffusion length for the FeMn layer, and we confirm the critical role of interfacial exchange coupling in enhancing spin dynamic damping. The exchange coupling at the Py/FeMn interface facilitates spin relaxation, resulting in the damping enhancement and blocking spin transmission from the Py to Pt (Cu) layer. These findings suggest that integrating antiferromagnetic materials with exchange coupling interfaces could significantly boost high-frequency spintronic applications.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-02-26
DOI
https://doi.org/10.1021/acsami.4c18113
Citations
1
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
1.25

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article

Exchange Coupling-Induced Spin Dynamic Damping Modulation at the Py/FeMn Interface

Zhaocong Huang, Qingjie Guo, Ruobai Liu, Mingming Tian et al.
1 citations
ACS Applied Materials & Interfaces
Magnetic properties of thin films
1.25
article

Exchange Coupling-Induced Spin Dynamic Damping Modulation at the Py/FeMn Interface

Zhaocong Huang, Qingjie Guo, Ruobai Liu, Mingming Tian, Ya Zhai, Jun Du, Qian Chen, Wei Jiang
article en
1 citations

Abstract

The spin dynamic damping is crucial for applications in magnetic memory, sensors, and logical systems. Here, focusing on interfacial antiferromagnetic exchange coupling, the magneto-dynamics of Ni<sub>80</sub>Fe<sub>20</sub>(Py)/Fe<sub>50</sub>Mn<sub>50</sub>(FeMn) bilayers is systematically investigated. When the FeMn thickness exceeds 5 nm, an interfacial exchange bias field appears, significantly increasing the spin dynamic damping of the Py/FeMn bilayer to around 0.015. A Cu spacer is introduced between the Py and FeMn layers, and the interfacial exchange bias effect is eliminated following a dramatic decrease in the spin dynamic damping. However, a slight damping increment is observed in Py/Cu/FeMn trilayers, which is attributed to the spin pumping mechanism. Based on spin pumping theory, the estimated interfacial spin mixing conductance is 3.44 nm<sup>-2</sup> in Py/Cu/FeMn, which is attributed to the weak spin-orbit coupling of the FeMn layer. These findings indicate that the dynamic damping of Py/FeMn bilayers is primarily driven by interfacial exchange coupling rather than the spin pumping effect. Furthermore, by employing FeMn as an insertion at Py/Pt and Py/Cu interfaces, we demonstrate the short spin diffusion length for the FeMn layer, and we confirm the critical role of interfacial exchange coupling in enhancing spin dynamic damping. The exchange coupling at the Py/FeMn interface facilitates spin relaxation, resulting in the damping enhancement and blocking spin transmission from the Py to Pt (Cu) layer. These findings suggest that integrating antiferromagnetic materials with exchange coupling interfaces could significantly boost high-frequency spintronic applications.

ACS Applied Materials & InterfacesVol. 17(12)
Spintronics Research Network of Japan (JP), Nanjing University (CN)
National Natural Science Foundation of China, China Scholarship Council, Jiangsu Planned Projects for Postdoctoral Research Funds, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 24%
Magnetic properties of thin films
1.25
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