Investigation of the burst phenomenon in SiPMs in liquid nitrogen

Abstract Burst effect of Silicon Photomultiplier (SiPM) at cryogenic temperatures have been discovered few years ago looking at the dark count rate of SiPMs at liquid nitrogen temperatures. Bursts are trains of single signals that happen randomly and are clearly distinguishable from the primary DCR and correlated noise because of their particular time distribution. In this article we describe a detailed study related to both the external causes that triggers bursts and to the phenomenon, internal to the sensor, that produces this dark signals. We related the burst occurrence to the luminescence produced by some trapping centers in the SiPMs when they are excited by ionizing radiation that impinges on the sensor.

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Publication Details

Journal
Journal of Instrumentation
Published
2025-02-01
DOI
https://doi.org/10.1088/1748-0221/20/02/p02024
Citations
1
Primary Topic
Ion-surface interactions and analysis
Type
article
Field-Weighted Citation Impact
1.33
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article

Investigation of the burst phenomenon in SiPMs in liquid nitrogen

M. Guarise, T. Giammaria, E. Luppi, D. Casazza et al.
1 citations
Journal of Instrumentation
Ion-surface interactions and analysis
1.33
article

Investigation of the burst phenomenon in SiPMs in liquid nitrogen

M. Guarise, T. Giammaria, E. Luppi, D. Casazza, S. Chiozzi, M. Fiorini, A. Cotta Ramusino, M. Andreotti, R. Calabrese, Anna Balboni, Annalea Corallo, L. Tomassetti, Lorenzo Pierini, Riccardo d'Amico
article en
1 citations

Abstract

Abstract Burst effect of Silicon Photomultiplier (SiPM) at cryogenic temperatures have been discovered few years ago looking at the dark count rate of SiPMs at liquid nitrogen temperatures. Bursts are trains of single signals that happen randomly and are clearly distinguishable from the primary DCR and correlated noise because of their particular time distribution. In this article we describe a detailed study related to both the external causes that triggers bursts and to the phenomenon, internal to the sensor, that produces this dark signals. We related the burst occurrence to the luminescence produced by some trapping centers in the SiPMs when they are excited by ionizing radiation that impinges on the sensor.

Journal of InstrumentationVol. 20(02)
University of Ferrara (IT), Istituto Nazionale di Fisica Nucleare, Sezione di Ferrara (IT)
Openalex Percentile: Top 26%
Ion-surface interactions and analysis
1.33
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