Anomalous increasing and recovery of the electrical resistivity and their sample-dependent suppression by the magnetic field in α-Sm2S3 single crystal

• High-quality single crystal samples of α‑Sm 2 S 3 with different directions of easy magnetization were prepared. • A huge increase and recovery in electrical resistivity, ρ ( T ), was observed at around magnetic transition temperature. • The strong anisotropy in ρ ( T ) between each axis and sample dependence were found. • The magnitude of the anomalous increase in ρ ( T ) reaches a factor of more than 10 5 in the absence of magnetic field. • Suppression effect by the applied magnetic field in ρ ( T ) is rapid in both samples, especially along the easy magnetization axis. Rare earth sesquisulfide α -Sm 2 S 3 having the orthorhombic crystal structure exhibits successive weak-ferromagnetic transitions at T C1 = 3.6 K and T C2 = 1.8 K. The α -Sm 2 S 3 single crystals with apparently different directions of easy magnetization were grown using a chemical transport reaction method. In this study, we report on the anomalous electrical resistivity observed in samples with different easy magnetization axes ( c -axis or a -axis) and the influence of the magnetic field on it. Significant anisotropy and sample dependence in electrical resistivity were found. In the absence of a magnetic field, a sharp increase in electrical resistivity was noted around 5.5 K, followed by a subsequent decrease. The magnitude of this increase is enormous, exceeding a factor of 10 5 . However, these anomalies were rapidly suppressed by applying a magnetic field, especially when the magnetic field was applied along the easy magnetization axis, regardless of the direction of electrical resistivity. The easy magnetization axis of the sample, the direction and magnitude of the applied magnetic field and the direction of current flow influenced the ρ ( T ) in various ways and showed a close relation to the complicated variation of the magnetic structure. It was also clarified that the electrical resistivity along the easy magnetization axis is the smallest among the axes even at 300 K in both samples.

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Publication Details

Journal
Journal of Magnetism and Magnetic Materials
Published
2025-02-26
DOI
https://doi.org/10.1016/j.jmmm.2025.172918
Primary Topic
Crystal Structures and Properties
Type
article
Field-Weighted Citation Impact
0.00

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article

Anomalous increasing and recovery of the electrical resistivity and their sample-dependent suppression by the magnetic field in α-Sm2S3 single crystal

Lijuan Zhao, S. Ebisu
Journal of Magnetism and Magnetic Materials
Crystal Structures and Properties
article

Anomalous increasing and recovery of the electrical resistivity and their sample-dependent suppression by the magnetic field in α-Sm2S3 single crystal

Lijuan Zhao, S. Ebisu
article en

Abstract

• High-quality single crystal samples of α‑Sm 2 S 3 with different directions of easy magnetization were prepared. • A huge increase and recovery in electrical resistivity, ρ ( T ), was observed at around magnetic transition temperature. • The strong anisotropy in ρ ( T ) between each axis and sample dependence were found. • The magnitude of the anomalous increase in ρ ( T ) reaches a factor of more than 10 5 in the absence of magnetic field. • Suppression effect by the applied magnetic field in ρ ( T ) is rapid in both samples, especially along the easy magnetization axis. Rare earth sesquisulfide α -Sm 2 S 3 having the orthorhombic crystal structure exhibits successive weak-ferromagnetic transitions at T C1 = 3.6 K and T C2 = 1.8 K. The α -Sm 2 S 3 single crystals with apparently different directions of easy magnetization were grown using a chemical transport reaction method. In this study, we report on the anomalous electrical resistivity observed in samples with different easy magnetization axes ( c -axis or a -axis) and the influence of the magnetic field on it. Significant anisotropy and sample dependence in electrical resistivity were found. In the absence of a magnetic field, a sharp increase in electrical resistivity was noted around 5.5 K, followed by a subsequent decrease. The magnitude of this increase is enormous, exceeding a factor of 10 5 . However, these anomalies were rapidly suppressed by applying a magnetic field, especially when the magnetic field was applied along the easy magnetization axis, regardless of the direction of electrical resistivity. The easy magnetization axis of the sample, the direction and magnitude of the applied magnetic field and the direction of current flow influenced the ρ ( T ) in various ways and showed a close relation to the complicated variation of the magnetic structure. It was also clarified that the electrical resistivity along the easy magnetization axis is the smallest among the axes even at 300 K in both samples.

Journal of Magnetism and Magnetic MaterialsVol. 620
Muroran Institute of Technology (JP)
Japan Society for the Promotion of Science, Japan Science and Technology Agency
Openalex Percentile: Top 98%
Crystal Structures and Properties
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