Performance Analysis of SiC and GaN-Based Traction Inverter in Electric Vehicle Drive System

This paper investigates the performance of SiC MOSFET and GaN e-HEMT-based three-level inverters in electric vehicle (EV) traction systems, comparing them with traditional two-level inverters. The study focuses on total harmonic distortion, efficiency, and voltage stress during switching, using PLECS simulations. It also evaluates the switching performance of the Wide Bandgap (WBG) Inverters A detailed model of EV powertrain, inverters and the vector control were modeled and tested under a specific driving profile. Results show that both SiC and GaN inverters achieve 98% efficiency but differ in conduction and switching losses. GaN inverters have higher conduction losses due to increased on-state resistance at higher temperatures, while SiC inverters exhibit greater switching losses from longer turn-on/off times. Three-level inverters improve efficiency by 20% at 20kHz and reduce total harmonic distortion by 10%. GaN-based inverters are ideal for high-frequency applications, while SiC-based inverters excel in high-temperature environments.