Significant Improvement in Channel Control by Adjusting Insulator Thickness in CNTFETs to Enhance Drain Current Compared with Traditional High “k” Di-Electrics

Aim: The switching efficiency of a Carbon enabled devices such as (CNTFET) is a crucial component that may be used to enhance channel control, which can significantly raise the drain current and make the CNTFET a dependable part for high-performance electronic applications. A critical step in maximizing the switching efficiency is Insulator thickness modulation. The study dealt with the investigation in the effects of Insulator thickness on CNTFETs figure of merit that determines the behavior of a transistor in the sub threshold region and optimizing leakage current. Simulation models were developed to investigate the relationship between Insulator thickness and switching efficiency in light of the CNTFET's electrical and physical characteristics. The results show that the Insulator thickness is inversely proportional to the switching efficiency and directly proportional to the drain current. This link can be explained by the fact that a wider electron transport system with fewer sub-threshold leakages results from greater gate channel control and decreased junction trap density. The findings of this study demonstrate that CNTFETs are a desirable option for applications in next-generation electronics since their performance may be greatly increased by adjusting the Insulator thickness with different gate insulators. The aforementioned findings provide crucial information for the design and advancement of upcoming carbon-enabled systems and promote the development of CNTFETs as a competitive substitute for MOSFETs.