Investigation of Silk Fibroin Natural Protein as a Gate Dielectric in Flexible Organic Field-Effect Transistors

This work represents the extraction process of silk fibroin (SF) aqueous solution from silkworm cocoons and its utilization as a promising natural gate dielectric candidate in organic field-effect transistors (OFETs). SF was combined with a thin HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layer for the demonstration of high-performance flexible OFETs for -5 V operation. OFETs showed excellent p-channel transistor characteristics with a low threshold voltage of -0.38 (±0.20) V and a good on-off current ratio of~10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup>. Moreover, decent electrical and bending stability were observed in these OFETs. These results indicate that SF can be further utilized as a suitable dielectric for exploration of flexible and eco-friendly OFETs.

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Publication Details

Published
2024-10-21
DOI
https://doi.org/10.1109/nmdc58214.2024.10894312
Primary Topic
Silk-based biomaterials and applications
Type
article
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article

Investigation of Silk Fibroin Natural Protein as a Gate Dielectric in Flexible Organic Field-Effect Transistors

Gargi Konwar, Shree Prakash Tiwari
Silk-based biomaterials and applications
article

Investigation of Silk Fibroin Natural Protein as a Gate Dielectric in Flexible Organic Field-Effect Transistors

Gargi Konwar, Shree Prakash Tiwari
article en

Abstract

This work represents the extraction process of silk fibroin (SF) aqueous solution from silkworm cocoons and its utilization as a promising natural gate dielectric candidate in organic field-effect transistors (OFETs). SF was combined with a thin HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layer for the demonstration of high-performance flexible OFETs for -5 V operation. OFETs showed excellent p-channel transistor characteristics with a low threshold voltage of -0.38 (±0.20) V and a good on-off current ratio of~10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup>. Moreover, decent electrical and bending stability were observed in these OFETs. These results indicate that SF can be further utilized as a suitable dielectric for exploration of flexible and eco-friendly OFETs.

Indian Institute of Technology Jodhpur (IN)
Openalex Percentile: Top 87%
Silk-based biomaterials and applications
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