Dynamical Characteristics of a Nano-Ionic Solid Electrolyte FET Using an LSTM Model
The complexity of multi-state devices (e.g., memristors, ferroelectric RAMs (FERAMs) hinder the creation of their unified physics-based model. Data-driven approaches, such as machine learning (ML), are increasingly favored to address this challenge. In this study, we demonstrate the dynamic modelling of a synaptic ZnO/Ta<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</inf> Solid Electrolyte-FET by transforming its characteristics into a multivariate time-series problem based on which a Long-Short Term Memory model of the device is constructed. Our method can also be applied to other multi-state devices to accelerate the development time of Neuromorphic Computing Systems.
Authors
- Xiaoyao Song (ORCID: https://orcid.org/0000-0002-8647-4324)
- S. K. Manhas (ORCID: https://orcid.org/0000-0003-3360-9683)
- Ankit Gaurav (ORCID: https://orcid.org/0000-0001-8280-1968)
- M.M. De Souza (ORCID: https://orcid.org/0000-0002-7804-7154)
Institutions
- Indian Institute of Technology Roorkee (IN)
- University of Sheffield (GB)
Publication Details
- Published
- 2024-10-21
- DOI
- https://doi.org/10.1109/nmdc58214.2024.10894584
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- UK-India Education and Research Initiative
- University of Sheffield
- Indian Institute of Technology Roorkee
- Engineering and Physical Sciences Research Council