Dynamical Characteristics of a Nano-Ionic Solid Electrolyte FET Using an LSTM Model

The complexity of multi-state devices (e.g., memristors, ferroelectric RAMs (FERAMs) hinder the creation of their unified physics-based model. Data-driven approaches, such as machine learning (ML), are increasingly favored to address this challenge. In this study, we demonstrate the dynamic modelling of a synaptic ZnO/Ta<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</inf> Solid Electrolyte-FET by transforming its characteristics into a multivariate time-series problem based on which a Long-Short Term Memory model of the device is constructed. Our method can also be applied to other multi-state devices to accelerate the development time of Neuromorphic Computing Systems.

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Published
2024-10-21
DOI
https://doi.org/10.1109/nmdc58214.2024.10894584
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Dynamical Characteristics of a Nano-Ionic Solid Electrolyte FET Using an LSTM Model

Xiaoyao Song, S. K. Manhas, Ankit Gaurav, M.M. De Souza
Semiconductor materials and devices
article

Dynamical Characteristics of a Nano-Ionic Solid Electrolyte FET Using an LSTM Model

Xiaoyao Song, S. K. Manhas, Ankit Gaurav, M.M. De Souza
article en

Abstract

The complexity of multi-state devices (e.g., memristors, ferroelectric RAMs (FERAMs) hinder the creation of their unified physics-based model. Data-driven approaches, such as machine learning (ML), are increasingly favored to address this challenge. In this study, we demonstrate the dynamic modelling of a synaptic ZnO/Ta<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</inf> Solid Electrolyte-FET by transforming its characteristics into a multivariate time-series problem based on which a Long-Short Term Memory model of the device is constructed. Our method can also be applied to other multi-state devices to accelerate the development time of Neuromorphic Computing Systems.

Indian Institute of Technology Roorkee (IN), University of Sheffield (GB)
UK-India Education and Research Initiative, University of Sheffield, Indian Institute of Technology Roorkee, Engineering and Physical Sciences Research Council
Affordable and clean energy
Openalex Percentile: Top 74%
Semiconductor materials and devices
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