Self-Heating Effects and Reliability Concerns in 28nm FD SOI Devices at Cryogenic Temperatures

Increases in power density in nanoscale devices and the use of different material systems exacerbates local self-heating and can affect device performance and reliability in various ways. In this work, we examine the role of self-heating effects on the high-energy tail of the distribution function in fully-depleted SOI devices. We find that, due to self-heating, the tail of the distribution function extends to higher energy at cryogenic temperatures as opposed to the isothermal case, thus raising the question of reliability concerns due to hot-carriers degradation in these devices.