BEOL Integration of Reconfigurable Li-Based Memristors on Foundry CMOS Chips

Li-based memristors have been found to have both volatile and non-volatile resistive switching behavior, which can be reconfigured for computation tasks like neuromorphic computing, showing its potential in novel energy efficient computing architecture. However, the incompatibility of Li-based materials with current CMOS production facility makes it almost impossible to have foundry fabricate Li-based memristors. We hereby propose a BEOL method to integrate Li-based memristors with foundry CMOS chips using an academic fabrication facility. The proposed BEOL integration method can also be generalized to other CMOS process-incompatible devices.