Simulation Study of the Subthreshold Characteristics of Cryogenic UTBB FDSOI with Interface Traps and Back-Gate Operation

This paper presents the interface trap effects on the subthreshold operation of cryogenic ultra-thin body and box fully depleted silicon-on-insulator (UTBB FDSOI) and that the back-gate technique dynamically modulates the DC characteristics and guarantees no degradation of the analog performance in the subthreshold regime. Besides the characterization from TCAD simulation, a proposed model, including the interface trap, can demonstrate the front/back gate-dependent subthreshold characteristics and its implementation in an industrial compact model. The proposed model is verified through the SPICE results.