Nitride Quantum Dot-in-Wire Structures with Deeper Confinement for Use in Non-Classical Light Generation

We report the calculation of fine-structure splitting (FSS) in four nitride quantum dot-in-wire devices for use in entangled photon pair generators (EPPG). For reliable operations, such non-classical photon generators must feature a vanishingly small FSS. In our recent work on InGaN/GaN systems, it was found that the non-polar m-plane structures exhibit a small FSS (in the range of 10 μeV) compared to the polar counterparts. In this work, we investigate design improvements via tuning the confinement potential. For the numerical simulation, a multiscale many-body framework is employed, where the excitonic energy is calculated by coupling a full configuration interaction (FCI) method with an atomistic multi-band tight-binding (TB) model.

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Publication Details

Published
2024-10-21
DOI
https://doi.org/10.1109/nmdc58214.2024.10893937
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
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article

Nitride Quantum Dot-in-Wire Structures with Deeper Confinement for Use in Non-Classical Light Generation

Shaikh Ahmed, Aqeel Y. Alalawi, Salim I. Almenshad
Semiconductor Quantum Structures and Devices
article

Nitride Quantum Dot-in-Wire Structures with Deeper Confinement for Use in Non-Classical Light Generation

Shaikh Ahmed, Aqeel Y. Alalawi, Salim I. Almenshad
article en

Abstract

We report the calculation of fine-structure splitting (FSS) in four nitride quantum dot-in-wire devices for use in entangled photon pair generators (EPPG). For reliable operations, such non-classical photon generators must feature a vanishingly small FSS. In our recent work on InGaN/GaN systems, it was found that the non-polar m-plane structures exhibit a small FSS (in the range of 10 μeV) compared to the polar counterparts. In this work, we investigate design improvements via tuning the confinement potential. For the numerical simulation, a multiscale many-body framework is employed, where the excitonic energy is calculated by coupling a full configuration interaction (FCI) method with an atomistic multi-band tight-binding (TB) model.

Southern Illinois University Carbondale (US)
National Science Foundation
Openalex Percentile: Top 76%
Semiconductor Quantum Structures and Devices
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