Method for Yield Enhancement of ReRAM Memory Arrays via Reference Voltage Calibration

This work proposes an adaptive reference voltage trimming algorithm for yield improvement of ReRAM memory arrays. The proposed method allows calibrating the reference voltage for each die individually post-fabrication, thus, miti-gating die-to-die variability that ReRAM is notorious for. It is shown that by trimming the reference voltage to the intersection point of data ‘1’ and data‘0’, the die yield can be significantly boosted for a given process technology and array specifications.

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Published
2024-10-21
DOI
https://doi.org/10.1109/nmdc58214.2024.10894221
Primary Topic
Advanced Memory and Neural Computing
Type
article
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article

Method for Yield Enhancement of ReRAM Memory Arrays via Reference Voltage Calibration

Ahmed S. Emara, Sherif Amer, Hassanein H. Amer
Advanced Memory and Neural Computing
article

Method for Yield Enhancement of ReRAM Memory Arrays via Reference Voltage Calibration

Ahmed S. Emara, Sherif Amer, Hassanein H. Amer
article en

Abstract

This work proposes an adaptive reference voltage trimming algorithm for yield improvement of ReRAM memory arrays. The proposed method allows calibrating the reference voltage for each die individually post-fabrication, thus, miti-gating die-to-die variability that ReRAM is notorious for. It is shown that by trimming the reference voltage to the intersection point of data ‘1’ and data‘0’, the die yield can be significantly boosted for a given process technology and array specifications.

American University in Cairo (EG)
Affordable and clean energy
Openalex Percentile: Top 74%
Advanced Memory and Neural Computing
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Method for Yield Enhancement of ReRAM Memory Arrays via Reference Voltage Calibration — Ahmed S. Emara, Sherif Amer, et al. · (2024) | TGRS Research Map | TGRS