GFET Dynamic Performance at 77 K and Circuit Design Proposals Suitable for Low-Temperature Microwave Applications
This work presents a small-signal model of a top-gate graphene field-effect transistor working in a 77 K environment. The proposed model is able to describe the experimental high-frequency operation of the device up to tens of GHz. The experimentally-calibrated small-signal GFET model has been used to design single- and double-stage amplifiers at 2.15 GHz, 2.2 GHz and 2.4 GHz with high-gain and high-selectivity. A discussion is provided regarding the feasibility of using such circuits as a second stage in microwave applications based on Josephson Junctions working at the same cryogenic temperature as the designs proposed here.
Authors
- Leslie M. Valdez-Sandoval (ORCID: https://orcid.org/0000-0003-4489-3480)
- S. Lepillet
- Nikolaos Mavredakis (ORCID: https://orcid.org/0000-0003-3630-9416)
- David Jiménez (ORCID: https://orcid.org/0000-0002-8148-198X)
- Aníbal Pacheco-Sánchez (ORCID: https://orcid.org/0000-0002-0897-0605)
- Eloy Ramírez‐García (ORCID: https://orcid.org/0000-0002-2594-621X)
- H. Happy (ORCID: https://orcid.org/0000-0003-2065-8080)
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université de Lille (FR)
- Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
- Instituto Politécnico Nacional (MX)
Publication Details
- Published
- 2024-10-21
- DOI
- https://doi.org/10.1109/nmdc58214.2024.10893955
- Citations
- 1
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.21