Printed High‐Entropy Prussian Blue Analogs for Advanced Non‐Volatile Memristive Devices (Adv. Mater. 8/2025)

High-Entropy Prussian Blue Analogs In article number 2410060 by Ben Breitung, Jasmin Aghassi-Hagmann, and co-workers, high-entropy metal organic frameworks (HE-MOFs) are employed as the active layer in sodium-modulated, non-volatile, printed memristors. These memristors exhibit low power consumption, self-compliance, and forming-free behavior, ideal for memory applications. The resistivity changes during operation arise from an insulating-metallic transition, driven by the distribution of sodium ions within the material. By leveraging the low-energy process of ion (de)insertion combined with a silver (Ag) electrode, the Ag/HE-MOF/ITO device demonstrates robust retention stability and a high ROFF/RON ratio, making it an efficient non-volatile memristor.

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Publication Details

Journal
Advanced Materials
Published
2025-02-01
DOI
https://doi.org/10.1002/adma.202570064
Citations
1
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.73
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article

Printed High‐Entropy Prussian Blue Analogs for Advanced Non‐Volatile Memristive Devices (Adv. Mater. 8/2025)

Simon Schweidler, Jasmin Aghassi‐Hagmann, Yanjiao Ma, Torsten Brezesinski et al.
1 citations
Advanced Materials
Advanced Memory and Neural Computing
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article

Printed High‐Entropy Prussian Blue Analogs for Advanced Non‐Volatile Memristive Devices (Adv. Mater. 8/2025)

Simon Schweidler, Jasmin Aghassi‐Hagmann, Yanjiao Ma, Torsten Brezesinski, Gabriel Cadilha Marques, Yin‐Ying Ting, Hongrong Hu, Yuting Dai, Piotr M. Kowalski, Horst Hahn, Thomas Diemant, Ben Breitung, Jing Lin, Yueyue He
article en
1 citations

Abstract

High-Entropy Prussian Blue Analogs In article number 2410060 by Ben Breitung, Jasmin Aghassi-Hagmann, and co-workers, high-entropy metal organic frameworks (HE-MOFs) are employed as the active layer in sodium-modulated, non-volatile, printed memristors. These memristors exhibit low power consumption, self-compliance, and forming-free behavior, ideal for memory applications. The resistivity changes during operation arise from an insulating-metallic transition, driven by the distribution of sodium ions within the material. By leveraging the low-energy process of ion (de)insertion combined with a silver (Ag) electrode, the Ag/HE-MOF/ITO device demonstrates robust retention stability and a high ROFF/RON ratio, making it an efficient non-volatile memristor.

Advanced MaterialsVol. 37(8)
Karlsruhe Institute of Technology (DE), Nanjing Normal University (CN), Forschungszentrum Jülich (DE), Technische Universität Darmstadt (DE), Helmholtz-Institute Ulm (DE), Jülich Aachen Research Alliance (DE), University of Oklahoma (US), RWTH Aachen University (DE)
Openalex Percentile: Top 31%
Advanced Memory and Neural Computing
0.73
DOIOpen Access PDFOpenAlex
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