Gamma attenuation, dose rate and buildup factors of Ga2O3- Lu2O3–SiO2–SnO glass system

This study explores the gamma attenuation characteristics, dose rate behavior, and buildup factors of 30Ga 2 O 3 –20Lu 2 O 3 –50SiO 2 –xSnO (LGSS) (x = 0.1, 0.3, 1, and 3) glass system, shedding light on its efficacy as a radiation shielding material. Using the weight fractions of elements in the LGSS glasses, we obtain the mass attenuation coefficients ( μ ρ ) by employing WinXCom software for photon energy ( E p h ) range of 15 keV–15000 keV. Moreover, different theoretical approaches are achieved to determine the other attenuation factors such as half value layer, dose rate, effective atomic number, and buildup factors. We found that as E p h increases, the values of μ ρ show a decreasing trend from maximum values at 15 keV to minimum at 6 MeV. For E p h ⟩ 6 MeV, there is a slow rise in the values of μ ρ up to the upper limit of the energy spectrum . Furthermore, the highest BUFs were recorded at 10 MeV and for thicknesses above 20 mfp due to multiple scattering of secondary photons created by the PP events. The present LGSSx glasses are compared to an array of conventional and recently prescribed radiation absorbers for photons from 137 Cs source (0.662 MeV). • Gamma attenuation of SiO 2 -based glass system is reported. • Gamma dose rate of this system is determined. • Buildup factors are studied for the investigated glass system. • LGSSx system has a potential use in nuclear and medical applications.