Synaptic devices based on silicon carbide for neuromorphic computing

Abstract To address the increasing demand for massive data storage and processing, brain-inspired neuromorphic computing systems based on artificial synaptic devices have been actively developed in recent years. Among the various materials investigated for the fabrication of synaptic devices, silicon carbide (SiC) has emerged as a preferred choices due to its high electron mobility, superior thermal conductivity, and excellent thermal stability, which exhibits promising potential for neuromorphic applications in harsh environments. In this review, the recent progress in SiC-based synaptic devices is summarized. Firstly, an in-depth discussion is conducted regarding the categories, working mechanisms, and structural designs of these devices. Subsequently, several application scenarios for SiC-based synaptic devices are presented. Finally, a few perspectives and directions for their future development are outlined.