Optoelectronic memristor based on a-C:Te film for muti-mode reservoir computing
Abstract Optoelectronic memristor is generating growing research interest for high efficient computing and sensing-memory applications. In this work, an optoelectronic memristor with Au/a-C:Te/Pt structure is developed. Synaptic functions, i.e., excitatory post-synaptic current and pair-pulse facilitation are successfully mimicked with the memristor under electrical and optical stimulations. More importantly, the device exhibited distinguishable response currents by adjusting 4-bit input electrical/optical signals. A multi-mode reservoir computing (RC) system is constructed with the optoelectronic memristors to emulate human tactile-visual fusion recognition and an accuracy of 98.7% is achieved. The optoelectronic memristor provides potential for developing multi-mode RC system.
Authors
- Haiyang Xu (ORCID: https://orcid.org/0000-0003-4188-6007)
- Xiaoning Zhao (ORCID: https://orcid.org/0000-0002-0082-2288)
- Ya Lin (ORCID: https://orcid.org/0000-0003-1421-8126)
- Daniele Ielmini (ORCID: https://orcid.org/0000-0002-1853-1614)
- Qiaoling Tian
- Yichun Liu (ORCID: https://orcid.org/0000-0003-1590-1904)
- Zhongqiang Wang (ORCID: https://orcid.org/0000-0002-1133-6058)
- Ye Tao (ORCID: https://orcid.org/0000-0002-3760-7637)
- Zhuangzhuang Li (ORCID: https://orcid.org/0009-0001-9747-1727)
- Kuo Xun
Institutions
- Northeast Normal University (CN)
- Politecnico di Milano (IT)
Publication Details
- Journal
- Journal of Semiconductors
- Published
- 2025-02-01
- DOI
- https://doi.org/10.1088/1674-4926/24100008
- Citations
- 2
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 1.46