Self-Heating Effect Coupled Compact Model to Predict Hot Carrier Injection Degradation in Nanoscale Bulk FinFETs Under Different Conditions

The HCI effect has been the focus of research as a common reliability consideration under advanced nodes in semiconductors. In this paper, a new compact model that takes into account the self-heating effect, width dependence, and substrate voltage dependence is proposed in the framework of a self-saturated power–law model containing oxide defects. The compact model employs different parameters in different carrier energy regions to improve the accuracy of the model. The predictions of the model fit well with experimental data extracted from the literature and the TCAD data, proving the validity of the model. Meanwhile, the model is used in this paper to predict and analyze the HCI’s degradation as well as lifetime under different conditions.