Self-Powered and Reconfigurable Double-Terminal MoS<sub>2</sub> Photodetector for Image Recognition

Two-dimensional (2D) semiconductors hold significant potential for the fabrication of self-powered reconfigurable devices due to their atomically thin body thickness and excellent heterogeneous integration capabilities. Despite these advantages, regulating polarity in 2D semiconductors remains challenging, and their complex heterostructures hinder practical applications. Here, we demonstrate a metal-semiconductor-metal (MSM) two-terminal structure to achieve self-powered and multiple reconfigurable functions in MoS<sub>2</sub> devices. By applying different voltage pulses to modulate the sulfur vacancy concentration, the device obtains a reversible internal electric field, leading to the bidirectional self-powered photocurrent that switches from negative to positive. This device achieves a fastest response speed of 224 μs and a maximum responsivity of 280 mA/W. Besides, we proposed a resistance-dependent method to achieve stable and reversible responsivity modulation and successfully implement the image processing and object detection using a convolutional neural network (CNN). This work provides a straightforward approach for integrating next-generation optoelectronic devices.

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Publication Details

Journal
Nano Letters
Published
2025-02-24
DOI
https://doi.org/10.1021/acs.nanolett.4c06084
Citations
11
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
5.70

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article

Self-Powered and Reconfigurable Double-Terminal MoS2 Photodetector for Image Recognition

Wencheng Niu, Xingqiang Liu, Fukai Shan, Xiao Fu et al.
11 citations
Nano Letters
2D Materials and Applications
5.70
article

Self-Powered and Reconfigurable Double-Terminal MoS2 Photodetector for Image Recognition

Wencheng Niu, Xingqiang Liu, Fukai Shan, Xiao Fu, Zhenyu Yang, Xuming Zou, Qingliang Liu, Chengjie Zhou, Jingli Wang
article en
11 citations

Abstract

Two-dimensional (2D) semiconductors hold significant potential for the fabrication of self-powered reconfigurable devices due to their atomically thin body thickness and excellent heterogeneous integration capabilities. Despite these advantages, regulating polarity in 2D semiconductors remains challenging, and their complex heterostructures hinder practical applications. Here, we demonstrate a metal-semiconductor-metal (MSM) two-terminal structure to achieve self-powered and multiple reconfigurable functions in MoS<sub>2</sub> devices. By applying different voltage pulses to modulate the sulfur vacancy concentration, the device obtains a reversible internal electric field, leading to the bidirectional self-powered photocurrent that switches from negative to positive. This device achieves a fastest response speed of 224 μs and a maximum responsivity of 280 mA/W. Besides, we proposed a resistance-dependent method to achieve stable and reversible responsivity modulation and successfully implement the image processing and object detection using a convolutional neural network (CNN). This work provides a straightforward approach for integrating next-generation optoelectronic devices.

Nano LettersVol. 25(9)
Qingdao University (CN), Hunan University (CN), Fudan University (CN), State Key Laboratory on Integrated Optoelectronics (CN), Shanghai Institute of Technical Physics (CN), Infrared Laboratories (United States) (US), State Key Laboratory of Infrared Physics
Shanghai Science and Technology Development Foundation, National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, Natural Science Foundation of Qingdao, National Key Research and Development Program of China
Openalex Percentile: Top 4%
2D Materials and Applications
5.70
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