Strain-induced Kramers–Weyl phase in III–V zinc blende systems

We present theoretical observations on the topological nature of strained III–V semiconductors. By k·p perturbation, it can be shown that the strain-engineered conduction band hosts a Kramers–Weyl node at the Γ point. It is theoretically shown that a curated strain can create and then tune the sign of the topological charge. Furthermore, we outline experimental methods for both the realization and detection of strain-induced topological phase transitions.