Tailoring transverse magneto-optical Kerr effect enhancement in Mie-resonant nanowire-based metasurfaces

Tailoring of the transverse magneto-optical Kerr effect (TMOKE) in hybrid metasurfaces comprising rectangular silicon nanowires coupled with a nickel substrate is demonstrated. The excitation of Mie modes of different orders in nanowires causes TMOKE enhancement. The in-plane magnetic dipole mode leads to the largest TMOKE enhancement compared to other Mie modes. Changing the width of silicon nanowires entails a modification of that mode, thereby ensuring tailoring of the TMOKE within the range of 2.2%–3.8%. This tunability is associated with the modification of the near-field localized at the Si/Ni interface and the far-field response of the excited magnetic dipole mode. Adjusting these two quantities allows one to achieve the highest values of the TMOKE caused by individual Mie modes in silicon nanowires.

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Publication Details

Journal
Applied Physics Letters
Published
2025-02-24
DOI
https://doi.org/10.1063/5.0257020
Citations
4
Primary Topic
Plasmonic and Surface Plasmon Research
Type
article
Field-Weighted Citation Impact
2.70

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article

Tailoring transverse magneto-optical Kerr effect enhancement in Mie-resonant nanowire-based metasurfaces

Karen Mamian, Andrey A. Fedyanin, В. В. Попов, М. А. Фролов
4 citations
Applied Physics Letters
Plasmonic and Surface Plasmon Research
2.70
article

Tailoring transverse magneto-optical Kerr effect enhancement in Mie-resonant nanowire-based metasurfaces

Karen Mamian, Andrey A. Fedyanin, В. В. Попов, М. А. Фролов
article en
4 citations

Abstract

Tailoring of the transverse magneto-optical Kerr effect (TMOKE) in hybrid metasurfaces comprising rectangular silicon nanowires coupled with a nickel substrate is demonstrated. The excitation of Mie modes of different orders in nanowires causes TMOKE enhancement. The in-plane magnetic dipole mode leads to the largest TMOKE enhancement compared to other Mie modes. Changing the width of silicon nanowires entails a modification of that mode, thereby ensuring tailoring of the TMOKE within the range of 2.2%–3.8%. This tunability is associated with the modification of the near-field localized at the Si/Ni interface and the far-field response of the excited magnetic dipole mode. Adjusting these two quantities allows one to achieve the highest values of the TMOKE caused by individual Mie modes in silicon nanowires.

Applied Physics LettersVol. 126(8)
Lomonosov Moscow State University (RU)
Russian Science Foundation
Openalex Percentile: Top 11%
Plasmonic and Surface Plasmon Research
2.70
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Tailoring transverse magneto-optical Kerr effect enhancement in Mie-resonant nanowire-based metasurfaces — Karen Mamian, Andrey A. Fedyanin, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS