Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN
The effects of the radio frequency (RF) bias power of inductively coupled plasma etching on the electrical properties of n-type Ohmic contact have been investigated. By reducing the RF bias power, a high-quality n-type Ohmic contact has been achieved on n-Al0.70Ga0.30N, with a specific contact resistivity of 1.2 × 10−4 Ω cm2. It is confirmed that low-power etching introduces fewer acceptor-state defects on the etched surface, which not only reduces the compensation for electrons but also reduces the degree of oxidation on the etched surface, providing favorable conditions for improving the electrical properties of metal–semiconductor contacts.
Authors
- L. S. Zhang
- Ning Tang (ORCID: https://orcid.org/0000-0003-2576-523X)
- Xinqiang Wang (ORCID: https://orcid.org/0000-0001-5514-8588)
- Chengzhi Ji (ORCID: https://orcid.org/0009-0002-8188-5666)
- Jing Lang (ORCID: https://orcid.org/0000-0003-1901-3998)
- Ji Chen (ORCID: https://orcid.org/0000-0003-1603-1963)
- Xuelin Yang (ORCID: https://orcid.org/0000-0001-5152-5075)
- Xiang Guo (ORCID: https://orcid.org/0000-0002-1282-2437)
- Yanqing Wu (ORCID: https://orcid.org/0000-0003-2578-5214)
- Xiangning Kang (ORCID: https://orcid.org/0009-0002-1802-1670)
- Fujun Xu (ORCID: https://orcid.org/0000-0002-0751-6566)
- Zhiyong Zhang (ORCID: https://orcid.org/0000-0003-1622-3447)
- Jiaming Wang (ORCID: https://orcid.org/0000-0003-4774-2899)
- Bo Shen (ORCID: https://orcid.org/0000-0003-2786-8400)
- Weikun Ge (ORCID: https://orcid.org/0000-0002-7179-865X)
- F. Y. Tan
Institutions
- Peking University (CN)
- Collaborative Innovation Center of Quantum Matter (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-02-24
- DOI
- https://doi.org/10.1063/5.0221287
- Citations
- 3
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 3.77
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China