IGBT loss analysis and junction temperature calculation based on Simulink

Abstract The Insulated Gate Bipolar Transistor (IGBT) is a crucial component in inverter systems, and accurately modeling the IGBT in the Controller Hardware-in-the-Loop (CHIL) simulation of inverters is a key challenge. Based on an electrical model of the IGBT, this paper develops an electro-thermal coupling model for IGBT suitable for Hardware-in-the-Loop (HIL) simulation. An IGBT loss model is established, and junction temperature calculations are performed. For a specific Infineon IGBT model, the simulation results obtained from Infineon’s IPOSIM online simulation platform are compared with offline simulation results generated using a fourth-order Foster thermal model in Matlab/Simulink, verifying the accuracy of the proposed model.