A low-phase-noise quadrature voltage oscillator with peak coupling injection technique in 0.13 <i>μ</i>m SiGe BiCMOS

This letter proposes a peak coupling injection (PCI) technique to achieve low-phase-noise in a quadrature voltage-controlled oscillator (QVCO). By precisely injecting the coupling current at the peak of the oscillation waveform, the impulse sensitivity function (ISF) is minimized at the moment of current injection, thus significantly improving the phase noise of QVCO. The proposed PCI-QVCO is designed and verified using 0.13 μm SiGe BiCMOS technology. Measurement results indicated that our PCI-QVCO has a phase noise of -91 dBc/Hz at 1-MHz offset from 13 GHz, with a power consumption of 38 mW and a figure of merit (FOM) of -157 dBc/Hz. The die area is 0.70×0.87 mm2.

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Publication Details

Journal
IEICE Electronics Express
Published
2025-02-24
DOI
https://doi.org/10.1587/elex.22.20250038
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

A low-phase-noise quadrature voltage oscillator with peak coupling injection technique in 0.13 μm SiGe BiCMOS

Chengkui Jia, Lei Zhao, Ruiliang Song, Sheng Xie et al.
IEICE Electronics Express
Radio Frequency Integrated Circuit Design
article

A low-phase-noise quadrature voltage oscillator with peak coupling injection technique in 0.13 μm SiGe BiCMOS

Chengkui Jia, Lei Zhao, Ruiliang Song, Sheng Xie, Luhong Mao, Naibo Zhang
article en

Abstract

This letter proposes a peak coupling injection (PCI) technique to achieve low-phase-noise in a quadrature voltage-controlled oscillator (QVCO). By precisely injecting the coupling current at the peak of the oscillation waveform, the impulse sensitivity function (ISF) is minimized at the moment of current injection, thus significantly improving the phase noise of QVCO. The proposed PCI-QVCO is designed and verified using 0.13 μm SiGe BiCMOS technology. Measurement results indicated that our PCI-QVCO has a phase noise of -91 dBc/Hz at 1-MHz offset from 13 GHz, with a power consumption of 38 mW and a figure of merit (FOM) of -157 dBc/Hz. The die area is 0.70×0.87 mm2.

IEICE Electronics ExpressVol. 22(7)
Tianjin University (CN), China Electronics Technology Group Corporation (CN)
National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 97%
Radio Frequency Integrated Circuit Design
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A low-phase-noise quadrature voltage oscillator with peak coupling injection technique in 0.13 <i>μ</i>m SiGe BiCMOS — Chengkui Jia, Lei Zhao, et al. · IEICE Electronics Express (2025) | TGRS Research Map | TGRS