Fabrication of High Aspect Ratio Gan and AlN Nanopillar Arrays with M-Oriented Sidewalls by Combining Dry and Wet Processes for the Next Generation of Deep Ultraviolet Light-Emitting Diodes

Authors

Christophe Durand (ORCID: https://orcid.org/0000-0002-5012-8411)
E. Pargon (ORCID: https://orcid.org/0000-0002-6337-9180)
Saron Sales De Mello (ORCID: https://orcid.org/0000-0003-4306-1228)
Camille Petit‐Etienne (ORCID: https://orcid.org/0000-0003-4199-5529)
Lucas Jaloustre (ORCID: https://orcid.org/0009-0001-0827-8715)
Lucie Valéra (ORCID: https://orcid.org/0000-0002-3742-3563)
Gwénolé Jacopin (ORCID: https://orcid.org/0000-0003-0049-7195)
S. Labau (ORCID: https://orcid.org/0009-0002-8076-7414)

Institutions

Laboratoire des Technologies de la Microélectronique (FR)

Publication Details

Journal: SPIRE - Sciences Po Institutional REpository
Published: 2024-11-03
Primary Topic: GaN-based semiconductor devices and materials
Type: article
Field-Weighted Citation Impact: 0.00

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article

Fabrication of High Aspect Ratio Gan and AlN Nanopillar Arrays with M-Oriented Sidewalls by Combining Dry and Wet Processes for the Next Generation of Deep Ultraviolet Light-Emitting Diodes

Christophe Durand, E. Pargon, Saron Sales De Mello, Camille Petit‐Etienne et al.

Nov 3, 2024

SPIRE - Sciences Po Institutional REpository

GaN-based semiconductor devices and materials

article

Fabrication of High Aspect Ratio Gan and AlN Nanopillar Arrays with M-Oriented Sidewalls by Combining Dry and Wet Processes for the Next Generation of Deep Ultraviolet Light-Emitting Diodes

Christophe Durand, E. Pargon, Saron Sales De Mello, Camille Petit‐Etienne, Lucas Jaloustre, Lucie Valéra, Gwénolé Jacopin, S. Labau

November 3, 2024article en

Abstract

No abstract available for this paper.

SPIRE - Sciences Po Institutional REpository

Laboratoire des Technologies de la Microélectronique (FR)

Openalex Percentile: Top 84%

GaN-based semiconductor devices and materials

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