Fabrication of Solar Cells By Tuning the Composition Ratio of AgGaTe2 to Ga-Rich

Abstract Silver gallium telluride (AgGaTe 2 ), an environmentally friendly material with a high optical absorption coefficient, was fabricated by the close-spaced sublimation (CSS) method. It was found that stoichiometric AgGaTe 2 thin films can be produced by using GaTe as the source material for CSS and controlling the Ga molar concentration. Solar cells based on Cu(In, Ga)Se 2 (CIGS), which has a similar structure to that of AgGaTe 2 , have been reported to exhibit conversion efficiencies greater than 20% when the CIGS film is Ga-rich and Cu-poor. By increasing the diffusion/sublimation time during the formation of AgGaTe 2 layers and using source materials with a Ga-rich composition, Ga-enriched AgGaTe 2 thin films were formed. Optimal Ga-rich AgGaTe 2 thin films were produced with extended diffusion/sublimation time, with a Ga mole fraction of 32%. However, Ga-rich Ag-Ga-Te compounds, AgGa 5 Te 8 or Ga 2 Te 3 were developed. Solar cells containing Ga-rich AgGaTe 2 films displayed improved current density–voltage characteristics and spectral sensitivity compared with those of cells containing stoichiometric AgGaTe 2 films. Under AM 1.5 irradiation, the conversion efficiency of the solar cells was recorded at 1.21%.

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Publication Details

Journal
Journal of Electronic Materials
Published
2025-02-21
DOI
https://doi.org/10.1007/s11664-025-11803-z
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00

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article

Fabrication of Solar Cells By Tuning the Composition Ratio of AgGaTe2 to Ga-Rich

Masakazu Kobayashi, Tatsuya Sasaki
Journal of Electronic Materials
Chalcogenide Semiconductor Thin Films
article

Fabrication of Solar Cells By Tuning the Composition Ratio of AgGaTe2 to Ga-Rich

Masakazu Kobayashi, Tatsuya Sasaki
article en

Abstract

Abstract Silver gallium telluride (AgGaTe 2 ), an environmentally friendly material with a high optical absorption coefficient, was fabricated by the close-spaced sublimation (CSS) method. It was found that stoichiometric AgGaTe 2 thin films can be produced by using GaTe as the source material for CSS and controlling the Ga molar concentration. Solar cells based on Cu(In, Ga)Se 2 (CIGS), which has a similar structure to that of AgGaTe 2 , have been reported to exhibit conversion efficiencies greater than 20% when the CIGS film is Ga-rich and Cu-poor. By increasing the diffusion/sublimation time during the formation of AgGaTe 2 layers and using source materials with a Ga-rich composition, Ga-enriched AgGaTe 2 thin films were formed. Optimal Ga-rich AgGaTe 2 thin films were produced with extended diffusion/sublimation time, with a Ga mole fraction of 32%. However, Ga-rich Ag-Ga-Te compounds, AgGa 5 Te 8 or Ga 2 Te 3 were developed. Solar cells containing Ga-rich AgGaTe 2 films displayed improved current density–voltage characteristics and spectral sensitivity compared with those of cells containing stoichiometric AgGaTe 2 films. Under AM 1.5 irradiation, the conversion efficiency of the solar cells was recorded at 1.21%.

Journal of Electronic MaterialsVol. 54(6)
Waseda University (JP)
Ministry of Education, Culture, Sports, Science and Technology
Openalex Percentile: Top 98%
Chalcogenide Semiconductor Thin Films
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Fabrication of Solar Cells By Tuning the Composition Ratio of AgGaTe2 to Ga-Rich — Masakazu Kobayashi, Tatsuya Sasaki · Journal of Electronic Materials (2025) | TGRS Research Map | TGRS