Intrinsic recombination velocity at (n+/p) junction and monochromatic recombination velocity at (p/p+) surface of (n+/p/p+) silicon solar cell under temperature, as applied to optimize (p) base thickness

From the expressions of the minority carriers recombination velocity at the (n+/p) junction and on the (p/p+) back side of the base of the crystalline silicon cell (n+/p/p+) under monochromatic illumination, the optimum (p) base thickness is determined and expressed as a function of temperature and for different values of the absorption coefficient