Multi-electron beam inspection application in memory fab
ASML’s multi-electron beam inspection (MBI) tool with 25 beamlets offers a viable solution for detecting voltage contrast defects as its primary use case and demonstrates the capability to detect smaller physical defects. This paper evaluates the performance of this MBI tool on Micron Technology’s DRAM and 3D-NAND devices, addressing both electrical and physical defects. The findings illustrate the tool’s benefit for use in technology development and high-volume manufacturing environments to enhance yield and monitor processes.
Authors
- Henry Yu (ORCID: https://orcid.org/0000-0002-1306-333X)
- Wendi Zhang
- Ampere A. Tseng (ORCID: https://orcid.org/0000-0003-4765-9665)
- Fei Wen (ORCID: https://orcid.org/0000-0001-7929-5005)
- E. C. M. Chen
- Jianjun Yu (ORCID: https://orcid.org/0000-0002-2101-7018)
- Yujie Chen (ORCID: https://orcid.org/0000-0001-7970-8893)
- Yuxuan Liu (ORCID: https://orcid.org/0000-0002-9607-0518)
- K. K. Lin
- T. H. Chiu
- Windsor Hsu
- Rajesh Kamana
- Greg Tsai
Institutions
- Micron (United States) (US)
- ASML (United States) (US)
Publication Details
- Published
- 2025-02-21
- DOI
- https://doi.org/10.1117/12.3056182
- Primary Topic
- Advancements in Photolithography Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00